MTD6P10E【PDF 1/7 页】MOSFET P-CH 100V 6A DPAK

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MTD6P10E

Preferred Device

Power MOSFET

6 Amps, 100 Volts

P ? Channel DPAK

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. The energy efficient design also

offers a drain ? to ? source diode with a fast recovery time. Designed for

low voltage, high speed switching applications in power supplies,

http://onsemi.com

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

Features

V (BR)DSS

100 V

R DS(on) TYP

660 m W

P ? Channel

I D MAX

6.0 A

? Avalanche Energy Specified

? Source ? to ? Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

? I DSS and V DS(on) Specified at Elevated Temperature

? Pb ? Free Packages are Available

MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)

MARKING DIAGRAM & PIN ASSIGNMENTS

Rating

Symbol

Value

Unit

Drain ? to ? Source Voltage

Drain ? to ? Gate Voltage (R GS = 1.0 M W )

Gate ? to ? Source Voltage

? Continuous

? Non ? repetitive (t p ≤ 10 ms)

Drain Current

? Continuous

? Continuous @ 100 ° C

? Single Pulse (t p ≤ 10 m s)

V DSS

V DGR

V GS

V GSM

I D

I DM

100

± 15

± 20

6.0

3.9

Vdc

Vpk

Adc

Apk

1 2

DPAK

CASE 369C

STYLE 2

Gate 1

Drain 2

Source 3

= Year

= Work Week

YWW

P10EG

Drain

Total Power Dissipation

Derate above 25 ° C

Total Power Dissipation @ T A = 25 ° C (Note 2)

P D

0.4

1.75

W/ ° C

T6P10E

= Device Code

= Pb ? Free Package

Operating and Storage Temperature Range

T J , T stg

? 55 to

150

° C

ORDERING INFORMATION

Single Pulse Drain ? to ? Source Avalanche

Energy ? Starting T J = 25 ° C

(V DD = 25 Vdc, V GS = 10 Vdc,

I L = 6.0 Apk, L = 10 mH, R G = 25 W )

Thermal Resistance

? Junction ? to ? Case

? Junction ? to ? Ambient (Note 1)

? Junction ? to ? Ambient (Note 2)

E AS

R q JC

R q JA

180

2.50

100

71.4

° C/W

Device

MTD6P10E

MTD6P10EG

MTD6P10ET4

MTD6P10ET4G

Package

DPAK

(Pb ? Free)

DPAK

Shipping ?

75 Units/Rail

2500 Tape & Reel

Maximum Temperature for Soldering T L 260 ° C

Purposes, 1/8 ″ from case for 10 seconds

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using the minimum recommended

pad size.

2. When surface mounted to an FR ? 4 board using the 0.5 sq.in. drain pad size.

(Pb ? Free)

?For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

? Semiconductor Components Industries, LLC, 2006

August, 2006 ? Rev. 5

Publication Order Number:

MTD6P10E/D

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